Deposition conditions of SrTiO3 films on various substrates by CVD and their dielectric properties

Abstract SrTiO 3 films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C 11 H 19 O 2 ) 2 –Ti(O·i-C 3 H 7 ) 4 –O 2 system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800°C, (100)SrTiO 3 //(100)Pt//(100)MgO. On the other hand, (110)-one-axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (e r ) of these films were approx. 220–240 and decreased to 90% with increasing temperature from 20 to 130°C. Their dispersion factors were within 0.5–1.5%. The e r of the films deposited at 730°C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800°C.