The effect of heating on InGaAs/InP(1 0 0) and InPO4/InP(1 0 0)

Abstract We have used Auger and electron energy loss spectroscopy to study the effect of temperature on InGaAs and InPO 4 grown on InP. The thickness of InPO 4 is of about 10 A whereas that of InGaAs is of about 800 A. InPO 4 is of great interest because it protects InP from loss of stoichiometry when heated to 450 °C. The InGaAs system heated at 450 °C seems to be unstable; metallic indium appears on the surface in conjunction with formation of GaAs.