High-quality GaInAs photodiodes grown using tertiarybutylarsine by atmospheric-pressure MOVPE

GaInAs was grown by atmospheric-pressure MOVPE using tertiarybutylarsine in place of arsine. Its carbon content was low and its carrier density and mobility were 2×1015cm-3and 50,500 cm2/Vs at 77 K, respectively, comparable with arsine-grown GaInAs. The composition of the GalnAs was, however, sensitive to growth temperature, pin diodes grown from tertiarybutylarsine were comparable with those grown from arsine, having dark currents < 100 pA and capacitance about 0.30 pF.