Real-time spectroscopic ellipsometry monitoring of Si1-xGex/Si epitaxial growth

Real‐time spectroscopic ellipsometry has been used to monitor oxide desorption and Si1−xGex/Si multilayer growth. A database of dielectric function spectra at the growth temperature has been determined for x=0.07, 0.11, 0.15. Real‐time data obtained during growth have been analyzed using spectral fitting techniques to determine composition at selected growth times, and by using time‐dependent data to determine optical constants and growth rates. The pseudosubstrate approximation has been used to determine layer parameters from the growing surface and information on interface widths obtained.