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Theoretical Modeling of Triple Barrier Resonant Tunneling Diodes Based on AlGaN/GaN Heterostructure
Theoretical Modeling of Triple Barrier Resonant Tunneling Diodes Based on AlGaN/GaN Heterostructure
2019
Taotao Rong
Lin’an Yang
Ziyue Zhao
Kai Zhang
Yue Hao
Keywords:
Physics
Resonant-tunneling diode
Heterojunction
Diode
Condensed matter physics
Quantum well
Quantum tunnelling
algan gan
Correction
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