Coulomb Blockade Effects in a Topological Insulator Grown on a High-Tc Cuprate Superconductor

Using high-Tc superconductors to proximitize topological materials could give rise to new phenomena with enhanced metrics. However, the evidence for proximity-induced superconductivity in heterostructures of topological insulators and high-Tc cuprates has been intensely debated. We use molecular beam epitaxy to grow ultrathin films of topological insulator Bi2Te3 on a cuprate Bi2Sr2CaCu2O8+x, and study the surface using low-temperature scanning tunneling microscopy and spectroscopy. In ~few unit-cell thick Bi2Te3 films, we find a V-shaped gap-like feature at the Fermi energy in dI/dV spectra. By reducing the coverage of Bi2Te3 films to create nanoscale islands, we discover that this spectral feature dramatically evolves into a much larger hard gap, which can be understood as a Coulomb blockade gap. This conclusion is supported by the evolution of dI/dV spectra with the lateral size of Bi2Te3 islands, as well as by topographic measurements that show an additional barrier separating Bi2Te3 and Bi2Sr2CaCu2O8+x. We conclude that the gap-like feature in dI/dV spectra in Bi2Te3 films can be explained by Coulomb blockade effects, which take into account additional resistive and capacitive coupling at the interface. Our experiments provide a fresh insight into the tunneling measurements of complex heterostructures with buried interfaces.