Extremely uniform silicides in the technology of integrated circuits

A method (900) for fabricating an integrated circuit comprising: Providing a semiconductor substrate (102); Forming a gate dielectric (104) on the semiconductor substrate (102); Forming a gate (106) over the dielectric of the gate (106); Forming source / drain junctions (504/506) in the semiconductor substrate (102); Forming ultra-uniform silicides (604/608) on the source / drain junctions (504/506); Depositing a dielectric layer (702) over the semiconductor substrate (102); and Forming contacts in the dielectric layer (702) to the ultra-uniform silicides (604/606/608).