Ion-beam milling of cubic silicon carbide (3C-SiC)

Abstract Cubic silicon carbide (3C-SiC) was etched by utilizing an Ar + ion-beam. The etching depth was determined versus angle, ion source current, anode voltage, and time. It was found that the maximum etching rate occurred when the ion-beam was incident at an angle of 45°. Constant etching rates were determined with respect to ion source current, anode voltage, and time.