Electro-optical Characteristics of NIR Light Emitting Sources for High Resolution Sensing Systems

S Pūkienė,A. Jasinskas,V. Bukauskas,V. Agafonov,M. Kamarauskas,A. Łuksa,A. Biciunas,Bronislovas Čechavičius,A. Šetkus,Renata Butkutė

Electro-optical Characteristics of NIR Light Emitting Sources for High Resolution Sensing Systems

2020

S Pūkienė
A. Jasinskas
V. Bukauskas
V. Agafonov
M. Kamarauskas
A. Łuksa
A. Biciunas
Bronislovas Čechavičius
A. Šetkus
Renata Butkutė

Laser diodes with parabolic and rectangular AlGa(As,Bi)/AlGaAs QWs were grown by MBE on n-GaAs(001). Operating wavelength was controlled by QW width and material composition. Laser bars processed by UV lithography were characterized by electroluminescence and I-V measurements.

Keywords:

high resolution
Optoelectronics
Photolithography
Diode
Materials science
Laser
Electroluminescence
Light-emitting diode
sensing system
Wavelength

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