Highly selective CdS:Ag heterojunction for photodetector applications

Cadmium Sulphide (CdS) thin films were equipped by thermal evaporation at thickness t (500±30) nm then doped with Silver (Ag) with ratios (X=0.0, 0.01, 0.03 and 0.05). The Substrates were used glass and single crystal silicon substrate with the direction (111) of the (p-type) to study the (structural, optical and photoelectric) properties. The ratios of alloy studied by EDS and the thin films structure deliberate by X-ray diffraction were a polycrystalline cubic phase. Direct band gap values with rang (2.4 eV -2.25 eV) were gotten from optical absorption measurements. The photo detector is shown height responsivity and touched at (0.43 A/W) with the bias voltages of (4V) and the detectivity of the fabricated CdS: Ag/Si UV detector at a wavelength of 551 nm is found to be 2.58244x1011cm Hz 1/2 W−1.