Temperature control CVD furnace and method for controllably preparing single-wall carbon nano tubes with temperature control CVD furnace

The invention relates to a temperature control CVD (chemical vapor deposition) furnace and a method for controllably preparing single-wall carbon nano tubes with the temperature control CVD furnace. The method comprises the steps of arranging a pair of plate electrodes in the furnace, introducing a direct-current electric field, and preparing the single-wall carbon nano tubes in different helical structures by taking a mixture comprising one or more of ferrocene, carbonyl iron, thiophene, ammonium molybdate, nickel, magnesium, cobalt, iron and the like as a catalyst and adjusting a plate electrode distance in the electric field and direct voltage in the atmosphere of argon or nitrogen and the like. The method has wide application prospects in industrial production. The most traditional methods for preparing the semiconductor or metal single-wall carbon nano tubes perform physical and chemical separation on samples in later stages, and are lower in yield and complicated in process, and the structures of the single-wall carbon nano tubes are easily damaged by the methods during the separation. Compared with the prior art, the temperature control CVD furnace with the internal electric field is adopted, so that a reaction vessel can produce the single-wall carbon nano tubes in different structures by the action of different temperatures and the electric field.