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Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets
Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets
2018
Shinya Kyogoku
Katsuhisa Tanaka
Keiko Ariyoshi
Ryosuke Iijima
Yusuke Kobayashi
Shinsuke Harada
Keywords:
Electromagnetic shielding
MOSFET
Composite material
Materials science
Trench
Engineering physics
on resistance
Correction
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