Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.