Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation

We have investigated the origins of sheet resistance increase in ultra shallow junctions formed by low energy As or Sb implantation. The increase is mainly attributed to dopant loss during annealing due to pileup of dopant at Si0 2 /Si interface. This problem is common to As and Sb and will become more significant as the implantation energies are decreased. We found that the pileup can be classified into two stages from the time dependence of Sb SIMS depth profile .In the early stage of annealing the pileup is very fast and is probably related to the transport of the dopants due to solid phase epitaxial growth of an amorphized layer formed by the implantation. In the later stage the pileup is much slower and is considered to be governed by dopant diffusion.