C–V–f, G–V–f and Z″–Z′ Characteristics of n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition

: n-Type Si/p-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance-voltage-frequency (C-V -f) and conductance-voltage-frequency (G-V -f) plots, the series resistance (Rs) values at zero bias voltage were 154.41 Ω at 2 MHz and 1.72 kΩ at 40 kHz. Rs should be ascribed to Rs occurring in the metallic contact and the bulk resistance in the active layer. At 40 kHz, the interface state density (nss) was 1.78 x 1013 eV-1 cm-2 and dropped exponentially to 1.39 x 1012 eV-1 cm-2 at 2 MHz. An assessed nss occurring at the heterojunction interface was the cause of deterioration in the photo-detection properties. At different V values, the appearance of the real (Z') and imaginary (Z'') characteristic curves revealed single semicircles whose centers lay below the Z' axis. The magnitude of the curve was diminished with the increment of V. The particularities of Z''-Z' plots can be identified as an equivalent circuit model. The appropriate model included Rs, which was combined with the parallel circuit of resistance and constant phase element.