Manufacturability improvements in EUV resist processing toward NXE:3300 processing
2014
As the design rule of semiconductor process gets finer, extreme ultraviolet lithography (EUVL)
technology is aggressively studied as a process for 22nm half pitch and beyond. At present, the studies for
EUV focus on manufacturability. It requires fine resolution, uniform, smooth patterns and low defectivity,
not only after lithography but also after the etch process.
In the first half of 2013, a CLEAN TRACK TM LITHIUS Pro TM Z-EUV was installed at imec for POR
development in preparation of the ASML NXE:3300. This next generation coating/developing system is
equipped with state of the art defect reduction technology. This tool with advanced functions can achieve
low defect levels.
This paper reports on the progress towards manufacturing defectivity levels and latest optimizations
towards the NXE:3300 POR for both lines/spaces and contact holes at imec.
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