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Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
1995
Hiroshi Saito
Minoru Yoneta
Masanori Ohishi
H. Kobashi
C. Hatano
K. Kitani
Keywords:
Metalorganic vapour phase epitaxy
Composite material
Doping
Molecular beam epitaxy
Acceptor
Materials science
Inorganic chemistry
Optoelectronics
acceptor doping
Correction
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