A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O3 films

Abstract Oxygen ions with 40 keV energy and doses of 1 × 10 12 to 5 × 10 14 / cm 2 were implanted into ferroelectric Pb(Zr,Ti)O 3 (PZT) thin films. X-ray diffraction patterns show that no obvious difference appears in the crystalline structure of PZT films before and after implantation; however, measurement of electrical properties shows that both remanent polarization and dielectric constant of the film decrease with increase of the implanted ion dose. The PZT film will completely become a linear dielectric if the implanted ion dose increases to 5 × 10 14 / cm 2 . A possible mechanism for the loss of remanent polarization after ion implantation is proposed.