Influence of preamorphization and recrystallization on indium doping profiles in silicon

The effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. During recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. We establish that the physical mechanism for this phenomenon in the 1018–1019 cm−3 concentration range is segregation determined, as there is no significant concentration dependence for those doses studied in this work. We also demonstrate that this phenomenon is enhanced at lower temperatures.