A Mobility Model for Random Discrete Dopants and Application to the Current Drivability of DRAM Cell

A new impurity mobility model suitable for the TCAD simulation of the random discrete dopant (RDD) has been proposed. The proposed model has been applied to the DRAM cell transistor of the 20-nm technology generation. The RDD effect in the drain region of the cell transistor alone gives relative standard variation in the driving current of ~3%.