A modified bilayer resist approach for 45 nm flash lithography
2008
Advancing technology nodes in semiconductor manufacturing require more demanding lithographic performance for
patterning. The advent of 45 nm development necessitated dual damascene lithography moving from a KrF-based
bilayer approach to one that includes an ArF photoresist for higher resolution. There are multiple methods for an ArF
dual damascene (via first, trench last) system, including bilayer, trilayer and hard mask approaches. Flash manufacturing
demands are sensitive to process cost of ownership, so more complex approaches such as trilayer and hard mask film
stacks were not as attractive. One method examined as an ArF dual damascene solution was a so-called "modified
bilayer" approach, which is a combination of both KrF and ArF resist materials; in particular, this film stack allows for
the use of ArF silicon-containing resists along with a variety of anti-reflective and gap fill underlayer materials. The
modified bilayer approach afforded many advantages, including chemical compatibility, etch performance and process
robustness. The modified bilayer approach represents a culmination of learning that has enabled 45 nm back end of the
line (BEOL) dual damascene processing with ArF silicon-containing photoresists.
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