Experimental Characterization of MOR-based and Delphi-like BCI DCTMs

A novel approach for the extraction of a Delphi-like Boundary-Condition-Independent (BCI) Dynamic Compact Thermal Model (DCTM) of a multi-chip package from its Detailed Thermal Model (DTM) was previously introduced. Such methodology is firstly based on the extraction of a MOR-based BCI model from the DTM, then on its simplification by means of a Genetic Algorithm into a Delphi-like BCI DCTM. In order to compare the accuracy of the DTM with that provided by both the MOR-based and the Delphi-like BCI DCTMs, a set of experimental measurements have been performed on test-board vehicles. In particular the JEDEC-standard thermal resistance “Junction-to-Case” of Semiconductor Devices with Heat Flow through a Single Path was examined. The agreement with experiment results of the initial DTM, its deduced MOR-based and its practical Delphi-like BCI DCTMs, is reported. The comparison highlights the ways to adjust DTM parameters as well as solder joint issues dictated by the brazing method.