Characterization of crystalline defects in silicon for SOI applications by means of light scattering tomography

Capabilities of LST technique to study defects in silicon wafers for SOI applications are reviewed. Hardware modifications required for quantitative defect size analysis are presented together with novel calibration procedure based on HF inspection of SOI wafers. Examples of LST sensitivity to different types of the defects are demonstrated. Theoretical predictions of dislocation light scattering dependence on polarization have been confirmed allowing determination of dislocation's Burger's vector from LST measurements. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)