Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type doping source
1998
Trisdimethylaminoarsine was used in atmospheric-pressure metalorganic chemical vapor deposition growth of ZnSe on GaAs. The metalorganic precursors employed for ZnSe growth were diethylzinc and diethylselenide, and ethyliodide was used as then-type dopant. P-on-n light emitting diode (LED) structures were prepared, and molecular beam epitaxially deposited HgTe layers were used as ohmic contacts to the p-type ZnSe. Blue LEDs were fabricated on p-on-n samples. Preliminary LED data and the material characterization data are presented.
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