TixSb100-x thin films as candidates for phase-change memory application

Tellurium-free TixSb100−x phase-change materials were systematically investigated. The amorphous-to-crystalline transition was studied by in situ resistance measurements. The crystallization temperature, crystalline resistance, and optical bandgap of TixSb100−x thin films were enhanced significantly with the increase in the titanium concentration. The phase structure and microstructure were confirmed by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM), respectively. The chemical state of the elements was detected by X-ray photoelectron spectroscopy (XPS). The phase transition speed between the amorphous and crystalline states was obtained by picosecond laser pulses. Phase change memory cells based on the Ti27Sb73 thin film were fabricated to evaluate the electrical characteristics as well. The results indicate that the TixSb100−x thin films have the great potentiality in phase change memory applications.