ed Highly Reliable GaN HEMTs on Si S

In this paper, we demonstrate 600 V highly high electron mobility transistors (HEMTs) o GaN on Si technologies are most impo mass-production at the Si-LSI manufacturing breakdown voltage over 1500 V was confirm dynamic on-resistance (RON) using cascode package. These GaN HEMT on Si based cas have passed the qualification based on the st Joint Electron Devices Engineering Council for the first time. High voltage accelera performed up to 1150 V. Even cons conservative failure mechanism, mean tim (MTTF) of over 1x10 7