Two-dimensional material field effect transistor and preparation method thereof

The invention discloses a two-dimensional material field effect transistor and a preparation method thereof, and belongs to the technical field of microelectronic. The two-dimensional material field effect transistor comprises a conductive substrate, an insulating dielectric layer, two-dimensional material, and metal electrodes, wherein the conductive substrate, the insulating dielectric layer, the two-dimensional material, and the metal electrodes are arranged successively from bottom to top. The preparation method of the two-dimensional material field effect transistor is a mechanical scratching method, and includes the steps: utilizing a mechanical peeling method to transfer the two-dimensional material on the insulating dielectric layer; vapor-plating the insulating dielectric layer and the two-dimensional material with metal integrally; carefully operating a needle point or a blade under a microscope to enable the needle point or the blade to just attach to the surface of the two-dimensional material; slowly moving the needle point or the blade to enable the needle point or the blade to scratch over the middle part of the two-dimensional material so as to remove the metal on the two-dimensional material to form a channel; and continuously moving the needle point or the blade to scratch out two metal electrodes, that is, a source electrode and a drain electrode. The preparation method of the two-dimensional material field effect transistor has the advantages of being simple in operation, having no demand for a mask layer, having less process steps, being short in the preparation time, being high in efficiency and being high in the yield.