Highly Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates and Their Application in Optical Switching

We report the realization of (a) an optically bistable switch using a strained resonant tunneling diode (RTD) and (b) highly strained RTDs exhibiting simultaneously high peak current densities (Jp) and peak-to-valley current ratios (PVR) suitable for high-speed electronic switching. Both of these make use of RTDs with (InAs)M/(GaAs)N strained short period multiple quantum well regions with AlAs barriers in a triple-well, double barrier structure. For the former, high contrast ratio (20:1) and an on state reflectivity of 46.5 % has been obtained at room temperature in an optically bistable switch involving a strained InGaAs/GaAs (100) multiple quantum well based asymmetric Fabty-Perot reflection modulator, detector, and a strained RTD and a Si field effect transistor. For the latter, we have obtained a Jp of 125 kA/cm2 with a PVR of 4.7 at room temperature.