Liquid-to-Solid Exfoliated Ag/2D-SnO/Au Flexible Memristor with Electric Field Direction-Dependent Asymmetric Hysteresis Characteristics

Abstract Using the facile liquid-to-solid exfoliation method, the flexible Ag/2D-SnO/Au lateral memristor was fabricated onto the Ag and Au electrodes pre-patterned paper substrate. The asymmetric electrode system (i.e., Ag/2D-SnO/Au) could effectively lead to the electric field direction-dependent asymmetric hysteresis behavior, which is advantageous for explicit switching of the bistable ON/OFF states with a lower sneak current. Furthermore, the device exhibited the trustworthy data retention and the reliable endurance characteristics even under flex. These could be attributable to the sturdy filament networks formed along the multiple 2D SnO nanocrystallite domains (i.e., shunt-and-series nanoscale filaments). The method and the findings may provide an effective solution for the fabrication of the high-performance flexible lateral-memristor, which is of great benefit in future nanoelectronic information device technology.