Control of Grain Boundary Location By Selective Nucleation Over Amorphous Substrates

A selective nucleation based crystal-growth-technique over amorphous substrates is originated. The method manipulates nucleation sites and periods and hence, controls the grain boundary location by modifing the substrate surface. In Si, small Si 3 N 4 nucleation sites are formed, 1–2 pm in diameter, 100 μm in period, over Sio 2 . One Si nucleus is formed exclusively in the small area of Si 3 N 4 by CVD. The highly faceted and periodically located nuclei grow over SiO 2 up to 100 μm in diameter before impingement. A MOS-FET fabricated inside the island operates comparably to the bulk Si control