Demonstration of InGaAs/Ge dual channel CMOS inverters with high electron and hole mobility using staked 3D integration

We have successfully fabricated high mobility dual channel CMOS inverters composed of InGaAs nMOSFETs and Ge pMOSFET utilizing stacked 3D integration, for the first time. The inverter operation down to V dd = 0.2 is demonstrated. InGaAs layers were bonded on Ge pMOSFETs and processed to form nMOSFETs. No degradation of Ge pMOSFETs during InGaAs nMOSFETs process was observed. Mobility enhancement of 2.6× and 3.0× for InGaAs nMOSFETs and Ge pMOSFETs, respectively, were realized after the stacking processes.