Selective area growing method for III-nitride micro graphic structure and structure

The invention discloses a selective area growing method for III-nitride micro graphic structure and a structure. A carbon nanotube array is taken as a micrometer/nanometer composite size mask; nanometer grade growing windows in bundle clusters and micrometer grade growing windows among the bundle clusters are arranged at intervals; according to the remarkable difference between the growth rates of III-nitride in the micrometer grade growing windows and the nanometer grade growing windows, an III-nitride dual-size micro graphic structure in which micro graphic structures which are the same in shapes and are different in sizes are arranged at intervals can be made on the micrometer/nanometer composite size mask. By adopting the carbon nanotube mask, the advantage of nanoheteroepitaxy can be brought into full play, the crystal quality of a micro graphic structural material is improved, and the residual stress is lowered; the nanotube has the characteristics of high thermal conductivity and high electrical conductivity, so that the heat dissipation of subsequently-manufactured micro-electron and photoelectron devices and the improvement on the electric property are facilitated.