Old Web
English
Sign In
Acemap
>
Paper
>
Analysis of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation
Analysis of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation
2020
Otsuka Tomohiro
Yamaguchi Yutaro
Shinjo Shintaro
Oishi Toshiyuki
Keywords:
Optoelectronics
self heating
Low frequency
Materials science
Buffer (optical fiber)
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]