Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer

Abstract Perovskite materials have been utilized as promising active materials for memristive devices due to their excellent properties. However, most reported perovskite-based memristive devices exhibit relatively low current ON/OFF ratios, which limits their practical applications in memory devices. In this work, memristive devices with a large memory margin were fabricated utilizing a CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite layer. The nanocrystalline MAPbBr 3 perovskite thin films were successfully formed at low temperature by using a chlorobenzene dripping method. The MAPbBr 3 perovskite layer was employed as a resistive switching layer in memristive devices with a structure of indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/MAPbBr 3 /Al. The maximum ON/OFF ratio of the memristive devices based on the MAPbBr 3 perovskite was as large as 3.6ｘ10 6 . The memristive devices showed high device-to-device reproducibility with set-voltage distributions between −0.5 and −0.8 V, as well as good endurances of at least 120 cycles and retention times longer than 1ｘ10 4  s. The carrier transport mechanisms of the memristive devices were described on the basis of the I-V curves, and their operating mechanisms were explained via the formation and rupture of filaments in the MAPbBr 3 perovskite.