Uniform, Fast, and Reliable LixSiOy-based Resistive Switching Memory

Non-uniform switching parameters and hard breakdown caused by excessive oxygen escape are the main issues that impede the development of SiOx-based resistive switching random access memory (RRAM). In this letter, low-oxygen-escape Pt/Ti/LixSiOy/Pt (Pt/Ti/LSO/Pt) resistive switching devices were studied systematically, where oxygen escape was mitigated by the application of O-reservoir Pt/Ti electrode. Compared with the Pt/Ti/SiOx/Pt devices, the Pt/Ti/LSO/Pt devices show high uniformity, low switching voltages ( 109) were demonstrated. These results demonstrate the possible application of low-oxygen-escape configuration for the SiOx-based RRAM development.