The effects of block oxide length (L bo ) and height (H bo ) in a bMOS

In this paper, we investigate the important device characteristics of block oxide (BO) MOSFETs (bMOS), which are the BO length (L bo ) and the height (H bo ). According to the simulation results, the variation of L bo and H bo strongly affects the device characteristics, such as the sub-threshold swing, threshold voltage, on-state drain current (I on ), and the off-state drain current (I off ). This is because the variation of L bo and H bo changes both the areas of BO and source/drain (S/D) regions, resulting in a variation of increase or decrease in the p-n junction area between the S/D regions and silicon substrate.