Electrical characteristics of Li and N co-doped amorphous InZnSnO thin film transistors

Li and N co-doped InZnSnO (IZTOLiN) thin film transistors (TFTs) with a bottom-gate structure were fabricated. The IZTOLiN thin film was deposited on the p-Si/SiO2 substrate at room temperature by radio frequency magnetron sputtering. The optical transmittance and microstructure of the IZTOLiN thin film were examined. The IZTOLiN TFT shows excellent performance with saturation mobility (μSAT) of 38.9 cm2/V ⋅ s, threshold voltage (VTH) of 3.2 V, subthreshold swing (SS) of 0.6 V/decade, and current on/off ratio (ION/IOFF) of 3.5 × 109. The mobility of the aged IZTOLiN TFT decreased while the IOFF increased due to the increase in carrier concentration induced by H2O adsorption. The effect of active layer thickness on the electrical characteristics of the TFTs was investigated. With the IZTOLiN film thickness increased, the mobility increased first and then decreased while the SS degraded continuously.Li and N co-doped InZnSnO (IZTOLiN) thin film transistors (TFTs) with a bottom-gate structure were fabricated. The IZTOLiN thin film was deposited on the p-Si/SiO2 substrate at room temperature by radio frequency magnetron sputtering. The optical transmittance and microstructure of the IZTOLiN thin film were examined. The IZTOLiN TFT shows excellent performance with saturation mobility (μSAT) of 38.9 cm2/V ⋅ s, threshold voltage (VTH) of 3.2 V, subthreshold swing (SS) of 0.6 V/decade, and current on/off ratio (ION/IOFF) of 3.5 × 109. The mobility of the aged IZTOLiN TFT decreased while the IOFF increased due to the increase in carrier concentration induced by H2O adsorption. The effect of active layer thickness on the electrical characteristics of the TFTs was investigated. With the IZTOLiN film thickness increased, the mobility increased first and then decreased while the SS degraded continuously.