Effect of Co‐Doping with Oxygen on the Characteristics of ZnS : Mn Thin‐Film Electroluminescent Structures

Doping with oxygen of ZnS:Mn films was performed by annealing at 400-600 °C in an atomic oxygen flow obtained by a HF discharge. The effect of such a doping on the electrooptical, luminescent, and photoelectrical characteristics of ac thin-film electroluminescent structures (TFELS) based on these films has been studied. The following changes in the films doped with O have been revealed from the obtained results: (i) the appearance at the upper interface of a thin ZnO layer and under it a ZnS 1 - x O x layer with x < 0.013, (ii) an increase of the concentration of Zn vacancies and their complexes with donors in the bulk of the film, and (iii) the appearance of point oxygen defects [O 2 - S ] 0 and their complexes with other defects, e.g. with Mn 2 + ions in the bulk. The influence of the doping on the performance of ZnS: Mn TFELS is discussed.