'InAsP/InGaAs Materials Development for 2.1 micrometers Avalanche Photodiodes. Phase 2.
1995
Abstract : The overall technical objective of this program is to advance the state-of-the-art of InAsP/InGaAs materials development so that 2.1 micrometers APDs which presently do not exist and offer ten times the light detection sensitivity of anything now available can be made.
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