A drive circuit based on a silicon carbide MOSFET

The invention relates to a drive circuit based on a silicon carbide MOSFET. Open-up and turn-off loops of the drive circuit go through different loops. The drive circuit also comprises four capacitors C[a1_H], C[a2_H], C[a1_L] and C[a2_L]. The effect of the capacitors C[a2_H] and C[a2_L] is to reduce influences by common-source parasitic inductors LS2H and LS2L on packaging pins. The effect of the capacitors C[a1_H] and C[a1_L] is to provide charge and discharge currents of junction capacitors CGDH and CGDL with loops with lower impedance within a silicon carbide MOSFET package. The invention can be used for suppressing problems of crosstalk of current transformers with bridge arm structures such as three-phase bridge-type inverters, full-bridge DC-DC inverters, etc. On the premise that the complexity of the drive circuit is not increased, gate-source voltage spikes of the silicon-carbide MOSFET due to crosstalk problems are suppressed and the reliability of power electronic devices based on the silicon carbide MOSFET is improved.