Synchrotron white beam topographic investigation of crystalline defects in silicon on insulator materials

Abstract Samples prepared by separation by implantation of oxygen (SIMOX) with dislocation densities of about 10 5 cm −2 have been studied by synchrotron white beam X-ray diffraction topography (WBT) in transmission geometry. The threading dislocations in the top Si layer were detected and found to have Burgers vectors parallel to the [011] and to the [011] directions. From moire fringes the lattice parameter difference between the top Si layer and the substrate was found to be about 6 × 10 −8 in the surface plane.