The effect of Si in Al-alloy on electromigration performance in Al filled vias

Electromigration performance of vias filled with Al-Si-Cu alloys on Ti glue layers was investigated in comparison with W-stud vias. In Al-Si-Cu filled vias, voids were formed at only a few locations in the test structure, while voids were formed at every via in W-stud via chains. It is supposed that Al moves through the Al-Si-Cu via during electromigration in spite of the existence of a glue layer at the via bottom. This phenomenon was observed only in the vias filled with Al-Si-Cu alloy. Al movement was prohibited in Al-Cu filled vias. In Al-Si-Cu filled vias, an Al-Ti-Si alloy was formed at the via bottom while Al3Ti was formed at Al-Cu filled vias. Al is speculated to move through this Al-Ti-Si alloy during electromigration.