Old Web
English
Sign In
Acemap
>
Paper
>
Si/Ge heterogenous complementary FET (hCFET) through layer transfer technology
Si/Ge heterogenous complementary FET (hCFET) through layer transfer technology
2021
Tatsuro Maeda
Hiroyuki Ishii
Toshifumi Irisawa
T. Z. Hong
Po-Jung Sung
Yao-Jen Lee
Wen Hsin Chang
Keywords:
Germanium
layer
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]