Ion Implantation in Wide Bandgap Semiconductors

Publisher Summary This chapter presents the status of ion implantation doping and isolation in group-III Nitride, SiC, and diamond semiconductors. Ion implantation is a process, whereby doping or compensating impurities are injected into a semiconductor by a high energy accelerator. Implantation has come to be the dominant doping technology in Si and GaAs microelectronics, although there has been significant technological development required to achieve this success. The material and process technologies related to ion implantation in wide bandgap semiconductors are discussed in the chapter. For damage compensation, the resistance typically goes through a maximum with increasing post-implantation annealing temperature as the damage is annealed out and hopping conduction is reduced. At higher temperatures, the defect density is further reduced below that required to compensate the material, and the resistivity decreases. For chemical compensation, the post-implantation resistance again increases with annealing temperature, showing a reduction in hopping conduction; but it then stabilizes at higher temperatures as a thermally stable compensating deep level is formed.