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Shape control of selective area growth of GaN for applying to three-dimensional channel transistors
Shape control of selective area growth of GaN for applying to three-dimensional channel transistors
2017
Hiroki Kuroiwa
Takuya Hamada
Tokio Takahashi
Toshihide Ide
Mitsuaki Shimizu
Takuya Hoshii
Kuniyuki Kakushima
Hitoshi Wakabayashi
Hiroshi Iwai
Kazuo Tsutsui
Keywords:
Transistor
Electronic engineering
Communication channel
Materials science
shape control
Optoelectronics
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