Effect of CW-laser irradiation of evaporated layers on silicon

Abstract Thin layers of Sb and In (150–200 A) evaporated on high purity Si Crystals were irradiated with a CW-Ar ion laser operated in TEM 00 mode in the visible (multiline) range. The laser beam, focused to a 1/e diameter of 40 μm, was scanned across the sample in air at a constant scanning speed using an electronically controlled X - Y scanner. Powers up to 10 W were used and scanning speeds ranged from 0.5 to 1.5 cm/s. Rutherford backscattering and ion channeling analysis of the samples, on the treated, untreated and virgin regions show that up to a few atomic percent of dopant atoms diffuse into the substrate. Axial impurity dips of about 50% show good substitutionality of S b. Evaporation loss of 40% of the dopant atoms during the laser treatment is exhibited for Sb. The measurements of depth distribution and substitutional concentrations for these dopants are reported.