Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes

Electroreflectance (contactless and with contacts) has been used to characterize an InGaAs vertical-cavity surface-emitting laser at 300 K. The 1020 nm lasing spectrum correlates very well with the energy of the lowest lying electroreflectance feature.