논문 : 실리콘 용탕으로부터 직접 제조된 태양광용 다결정 실리콘의 siC 오염 연구

Silicon (si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were invest-tigated In or process BN was coated of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of si melt in casting mold.As a resurt, polycrystalline wafer with dimension of 156x156mm and thckness of 300±20um was suc-cessively obtained. There were, however, severe contaminations such as BN and SIC on surface of the as-grown wafer.While BN powders were dasily removed by brushing sulface, SiC could not be eliminated As a resurt of BN analysis, C source for was from binder containd in BN slurry.Threfore.to eliminate those C sources, additional flushing process was carried out befre Si was melted By adding 3-times flusing processes, SIC was not deteced on the surface of as-grown Si wafer polycrystalline Si wafer directy grown from Si melt in this study can be applied for the cost-effective Si solar cells.