Silicon carbide semiconductor device and manufacturing method for the same

A silicon carbide semiconductor device includes: a semiconductor substrate (1, 2, 3a, 3b, 4a, 4b), which is made of silicon carbide and having a major surface and a back side; and an ohmic electrode (11), one of the main surface and the back surface of the semiconductor substrate ohmic contact. A boundary between the ohmic electrode and the one of the main surface and the back surface of the semiconductor substrate is finished with an element which has a greater Pauling electronegativity than silicon and a bond energy of silicon, which is larger than a binding energy of Si-H.