Breakthrough ofon-resistance Silimit bySuper3DMOSFET under100Vbreakdown voltage

resistance. Recently ultra dense trench gateMOSFET Under100Vbreakdown voltage, anewdevicewasadopted toreduce thechannel resistance further structure isrequired forthepurpose ofreducing[6][7]. Itson-resistance hasbeenreduced by the on-resistance andforhighreliability. Inthis study,development oftheprocess technique forfabricating itwas demonstrated thattheSilimitofon-theultra dense trench gate, buttheSilimit hasnotbeen resistance was brokenby Super3D MOSFET broken. Therefore, inthelowbreakdown voltage anew structure thatwehadalready proposed inanactualdevice structure thatcanreduce boththechannel prototype fabrication. Itson-resistance was16.4resistance andthedrift resistance forbreaking theSi mQjmm2 at thebreakdownvoltage of 58V.limit isrequired. As thisrequest we havealready Moreover, itwasclarified thattheUIS(unclamped proposed theSuper3D MOSFET thathasa wide inductive switching) endurance ofthisdevice was current path inthedepth direction without enlarging its